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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1692 DESCRIPTION *Collector-Emitter Sustaining Voltage-- : VCEO(SUS) = 100V(min.) *DC Current Gain-- : hFE = 2000(Min.) @ IC= 1.5 A *Complement to Type 2SB1149 APPLICATIONS *Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 150 V 100 V 8 V 3 5 A A 1.3 W 15 UNIT .cn mi e Collector Current-Peak Collector Power Dissipation Ta=25 PC Collector Power Dissipation TC=25 Ti Tstg Junction Temperature 150 Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1692 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 3A; IB= 3mA, L= 1.0mH B 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 A ICEO Collector Cutoff Current VCE= 100V; RBE= 1.0 mA hFE-1 DC Current Gain IC= 1.5 A; VCE= 2V hFE-2 DC Current Gain Switching Times ton tstg tf Turn-on Time Storage Time Fall Time w w L scs .i w K IC= 3 A; VCE= 2V .cn mi e 2000 1000 0.5 2.0 1.0 20000 s s s IC= 1.5A, IB1= -IB2= 1.5mA; RL= 27; VCC 40V hFE-1 Classifications M 2000-5000 4000-12000 8000-20000 isc Websitewww.iscsemi.cn |
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